Flat Optical Conductivity in ZrSiS due to Two-Dimensional Dirac Bands
ZrSiS exhibits a frequency-independent interband conductivity σ(ω)=const(ω)≡σ_{flat} in a broad range from 250 to 2500 cm^{-1} (30-300 meV). This makes ZrSiS similar to (quasi-)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the tran...
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Veröffentlicht in: | Physical review letters 2017-11, Vol.119 (18), p.187401-187401, Article 187401 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ZrSiS exhibits a frequency-independent interband conductivity σ(ω)=const(ω)≡σ_{flat} in a broad range from 250 to 2500 cm^{-1} (30-300 meV). This makes ZrSiS similar to (quasi-)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the transitions between quasi-two-dimensional Dirac bands near the Fermi level. In contrast to graphene, σ_{flat} is not universal but related to the length of the nodal line in the reciprocal space, k_{0}. Because of spin-orbit coupling, the discussed Dirac bands in ZrSiS possess a small gap Δ, for which we determine an upper bound max(Δ)=30 meV from our optical measurements. At low temperatures the momentum-relaxation rate collapses, and the characteristic length scale of momentum relaxation is of the order of microns below 50 K. |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/physrevlett.119.187401 |