Flat Optical Conductivity in ZrSiS due to Two-Dimensional Dirac Bands

ZrSiS exhibits a frequency-independent interband conductivity σ(ω)=const(ω)≡σ_{flat} in a broad range from 250 to 2500  cm^{-1} (30-300 meV). This makes ZrSiS similar to (quasi-)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the tran...

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Veröffentlicht in:Physical review letters 2017-11, Vol.119 (18), p.187401-187401, Article 187401
Hauptverfasser: Schilling, M B, Schoop, L M, Lotsch, B V, Dressel, M, Pronin, A V
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Sprache:eng
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Zusammenfassung:ZrSiS exhibits a frequency-independent interband conductivity σ(ω)=const(ω)≡σ_{flat} in a broad range from 250 to 2500  cm^{-1} (30-300 meV). This makes ZrSiS similar to (quasi-)two-dimensional Dirac electron systems, such as graphite and graphene. We assign the flat optical conductivity to the transitions between quasi-two-dimensional Dirac bands near the Fermi level. In contrast to graphene, σ_{flat} is not universal but related to the length of the nodal line in the reciprocal space, k_{0}. Because of spin-orbit coupling, the discussed Dirac bands in ZrSiS possess a small gap Δ, for which we determine an upper bound max(Δ)=30  meV from our optical measurements. At low temperatures the momentum-relaxation rate collapses, and the characteristic length scale of momentum relaxation is of the order of microns below 50 K.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.119.187401