Accelerating ion diffusion with unique three-dimensionally interconnected nanopores for self-membrane high-performance pseudocapacitors
Herein, a unique three-dimensionally interconnected nanoporous structure (3-D INPOS) pseudocapacitor electrode, which possesses a large surface area, an efficient electron and ion transport, together with a remarkable structural stability, has been constructed via soft anodization of an aluminum all...
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Veröffentlicht in: | Nanoscale 2017-01, Vol.9 (46), p.18311-18317 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Herein, a unique three-dimensionally interconnected nanoporous structure (3-D INPOS) pseudocapacitor electrode, which possesses a large surface area, an efficient electron and ion transport, together with a remarkable structural stability, has been constructed via soft anodization of an aluminum alloy, cost-effective ultrasonic spray pyrolysis (USP)-assisted deposition of fluorine-doped tin oxide (FTO), and controllable electrochemical deposition of nanostructured manganese dioxide (MnO
). Taking the advantage of large surface area, the as-built 3-D INPOS pseudocapacitor electrode exhibits the highest areal capacitance of 540 mF cm
and a volumetric capacitance of 135 F cm
, which is 53% higher than that achieved from the conventional 3-D nanopore pseudocapacitor electrode and 17.6 times higher than that of the planar electrode. More interestingly, the unique 3-D interconnected structure offers an unrestricted space for the diffusion of electrolyte ions. Thus, the 3-D INPOS electrode achieves a higher rate capability than the 3-D nanopore electrode. As a proof of concept, a symmetric self-membrane pseudocapacitor device was constructed by simply stacking two pieces of the 3-D INPOS electrodes. Without an added separator, the device possesses a largely reduced dead volume and achieves the highest volumetric capacitance of 28.9 F cm
and a specific energy of 2.36 mW h cm
. The largely enhanced capacitance, rate capability, and specific energy certainly make the 3-D INPOS an ideal architecture for the fabrication of high-performance pseudocapacitors. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c7nr06234f |