Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence

Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence

Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the lin...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2008-11, Vol.266 (21), p.4762-4765
Hauptverfasser: Yu, Seung-Jun, Ohki, Yoshimichi, Fujimaki, Makoto, Awazu, Koichi, Tominaga, Junji, Sasa, Kimikazu, Komatsubara, Tetsuro
Format: Artikel
Sprache:eng
Schlagworte:
Birefringence
Ion implantation
Planar lightwave circuit
Polarization dependent loss
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Zusammenfassung:Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2008.07.027