Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α‑Ga2O3/ZnO Isotype Heterostructures

The metastable α-phase Ga2O3 is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-Ga2O3 remains challenging. To this end, single...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS applied materials & interfaces 2017-10, Vol.9 (42), p.36997-37005
Hauptverfasser: Chen, Xuanhu, Xu, Yang, Zhou, Dong, Yang, Sen, Ren, Fang-fang, Lu, Hai, Tang, Kun, Gu, Shulin, Zhang, Rong, Zheng, Youdou, Ye, Jiandong
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The metastable α-phase Ga2O3 is an emerging material for developing solar-blind photodetectors and power electronic devices toward civil and military applications. Despite its superior physical properties, the high quality epitaxy of metastable phase α-Ga2O3 remains challenging. To this end, single crystalline α-Ga2O3 epilayers are achieved on nonpolar ZnO (112̅0) substrates for the first time and a high performance Au/α-Ga2O3/ZnO isotype heterostructure-based Schottky barrier avalanche diode is demonstrated. The device exhibits self-powered functions with a dark current lower than 1 pA, a UV/visible rejection ratio of 103 and a detectivity of 9.66 × 1012 cm Hz1/2 W–1. Dual responsivity bands with cutoff wavelengths at 255 and 375 nm are observed with their peak responsivities of 0.50 and 0.071 A W–1 at −5 V, respectively. High photoconductive gain at low bias is governed by a barrier lowing effect at the Au/Ga2O3 and Ga2O3/ZnO heterointerfaces. The device also allows avalanche multiplication processes initiated by pure electron and hole injections under different illumination conditions. High avalanche gains over 103 and a low ionization coefficient ratio of electrons and holes are yielded, leading to a total gain over 105 and a high responsivity of 1.10 × 104 A W–1. Such avalanche heterostructures with ultrahigh gains and bias-tunable UV detecting functionality hold promise for developing high performance solar-blind photodetectors.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.7b09812