Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure
The resistive switching characteristics of a scalable IrO x /Al 2 O 3 /W cross-point structure and its mechanism for pH/H 2 O 2 sensing along with glucose detection have been investigated for the first time. Porous IrO x and Ir 3+ /Ir 4+ oxidation states are observed via high-resolution transmission...
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Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2017-10, Vol.19 (38), p.25938-25948 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The resistive switching characteristics of a scalable IrO
x
/Al
2
O
3
/W cross-point structure and its mechanism for pH/H
2
O
2
sensing along with glucose detection have been investigated for the first time. Porous IrO
x
and Ir
3+
/Ir
4+
oxidation states are observed
via
high-resolution transmission electron microscope, field-emission scanning electron spectroscopy, and X-ray photo-electron spectroscopy. The 20 nm-thick IrO
x
devices in sidewall contact show consecutive long dc cycles at a low current compliance (CC) of 10 μA, multi-level operation with CC varying from 10 μA to 100 μA, and long program/erase endurance of >10
9
cycles with 100 ns pulse width. IrO
x
with a thickness of 2 nm in the IrO
x
/Al
2
O
3
/SiO
2
/p-Si structure has shown super-Nernstian pH sensitivity of 115 mV per pH, and detection of H
2
O
2
over the range of 1-100 nM is also achieved owing to the porous and reduction-oxidation (redox) characteristics of the IrO
x
membrane, whereas a pure Al
2
O
3
/SiO
2
membrane does not show H
2
O
2
sensing. A simulation based on Schottky, hopping, and Fowler-Nordheim tunneling conduction, and a redox reaction, is proposed. The experimental
I
-
V
curve matches very well with simulation. The resistive switching mechanism is owing to O
2−
ion migration, and the redox reaction of Ir
3+
/Ir
4+
at the IrO
x
/Al
2
O
3
interface through H
2
O
2
sensing as well as Schottky barrier height modulation is responsible. Glucose at a low concentration of 10 pM is detected using a completely new process in the IrO
x
/Al
2
O
3
/W cross-point structure. Therefore, this cross-point memory shows a method for low cost, scalable, memory with low current, multi-level operation, which will be useful for future highly dense three-dimensional (3D) memory and as a bio-sensor for the future diagnosis of human diseases.
The resistive switching characteristics of a scalable IrO
x
/Al
2
O
3
/W cross-point structure and its mechanism for pH/H
2
O
2
sensing along with glucose detection have been investigated for the first time. |
---|---|
ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/c7cp05089e |