Effect of nitrogen doping on the photoluminescence intensity of graphene quantum dots

We have developed a facile, fast, and one-step synthetic method to prepare graphene quantum dots (GQDs) simultaneously with nitrogen (N) doping via pulsed laser ablation. The N-doped GQDs (N-GQDs) with an average size around 3 nm and an N/C atomic ratio of 33% have been obtained. The N-GQDs emit blu...

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Veröffentlicht in:Optics letters 2017-09, Vol.42 (18), p.3642-3645
Hauptverfasser: Santiago, Svette Reina Merden, Wong, Yee Ann, Lin, Tzu-Neng, Chang, Chiao-Hsin, Yuan, Chi-Tsu, Shen, Ji-Lin
Format: Artikel
Sprache:eng
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Zusammenfassung:We have developed a facile, fast, and one-step synthetic method to prepare graphene quantum dots (GQDs) simultaneously with nitrogen (N) doping via pulsed laser ablation. The N-doped GQDs (N-GQDs) with an average size around 3 nm and an N/C atomic ratio of 33% have been obtained. The N-GQDs emit blue photoluminescence (PL), where the PL intensity enhances as the N doping increases. The PL enhancement for the N-GQDs with a factor as high as 25 has been achieved as compared to GQDs. The origin of the PL enhancement in GQDs after N doping is attributed to the increased densities of pyridinic and graphitic N.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.42.003642