Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

Single-photon avalanche diodes in 0.18-μm high-voltage CMOS technology

We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-µm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitt...

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Veröffentlicht in:Optics express 2017-06, Vol.25 (12), p.13333-13339
Hauptverfasser: Huang, L D, Wu, J Y, Wang, J P, Tsai, C M, Huang, Y H, Wu, D R, Lin, S D
Format: Artikel
Sprache:eng
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Zusammenfassung:We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-µm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.25.013333