Intramolecular Locked Dithioalkylbithiophene‐Based Semiconductors for High‐Performance Organic Field‐Effect Transistors

Intramolecular Locked Dithioalkylbithiophene‐Based Semiconductors for High‐Performance Organic Field‐Effect Transistors

New 3,3′‐dithioalkyl‐2,2′‐bithiophene (SBT)‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completel...

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Veröffentlicht in:Advanced materials (Weinheim) 2017-09, Vol.29 (35), p.n/a
Hauptverfasser: Vegiraju, Sureshraju, Chang, Bo‐Chin, Priyanka, Pragya, Huang, Deng‐Yi, Wu, Kuan‐Yi, Li, Long‐Huan, Chang, Wei‐Chieh, Lai, Yi‐Yo, Hong, Shao‐Huan, Yu, Bo‐Chun, Wang, Chien‐Lung, Chang, Wen‐Jung, Liu, Cheng‐Liang, Chen, Ming‐Chou, Facchetti, Antonio
Format: Artikel
Sprache:eng
Schlagworte:
Charge transport
Chemical synthesis
Copolymerization
dithienothiophene
dithioalkylbithiophene
Field effect transistors
Grazing incidence
Locks
Molecular orbitals
organic field‐effect transistors
Organic semiconductors
Semiconductor devices
Single crystals
solution‐shearing
Transistors
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Zusammenfassung:New 3,3′‐dithioalkyl‐2,2′‐bithiophene (SBT)‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)⋯S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′‐dialkyl‐2,2′‐bithiophene, the resulting SBT systems are planar (torsional angle
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201702414