The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode
A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (Idark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the...
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Veröffentlicht in: | Nanotechnology 2017-09, Vol.28 (36), p.365505-365505 |
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creator | Zhang, Dezhong Liu, Chunyu Xu, Ruiliang Yin, Bo Chen, Yu Zhang, Xindong Gao, Fengli Ruan, Shengping |
description | A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (Idark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO2/NiO films, demonstrating a high resistance state and contributing to a lower Idark of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 1014 cm Hz1/2 W−1 for the optimal device. The device with the structure of ITO/TiO2/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance. |
doi_str_mv | 10.1088/1361-6528/aa7bb8 |
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Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO2/NiO films, demonstrating a high resistance state and contributing to a lower Idark of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 1014 cm Hz1/2 W−1 for the optimal device. The device with the structure of ITO/TiO2/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/aa7bb8</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>limited dark current and noise ; one-step oxidation ; pn heterojunction ; self-depleting</subject><ispartof>Nanotechnology, 2017-09, Vol.28 (36), p.365505-365505</ispartof><rights>2017 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1361-6528/aa7bb8/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Zhang, Dezhong</creatorcontrib><creatorcontrib>Liu, Chunyu</creatorcontrib><creatorcontrib>Xu, Ruiliang</creatorcontrib><creatorcontrib>Yin, Bo</creatorcontrib><creatorcontrib>Chen, Yu</creatorcontrib><creatorcontrib>Zhang, Xindong</creatorcontrib><creatorcontrib>Gao, Fengli</creatorcontrib><creatorcontrib>Ruan, Shengping</creatorcontrib><title>The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (Idark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO2/NiO films, demonstrating a high resistance state and contributing to a lower Idark of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 1014 cm Hz1/2 W−1 for the optimal device. The device with the structure of ITO/TiO2/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance.</description><subject>limited dark current and noise</subject><subject>one-step oxidation</subject><subject>pn heterojunction</subject><subject>self-depleting</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNptkUtLAzEQx4MoWKt3jzkquG4e-0iPpfiC0l5aryFPm7JN1k324HfwQ5tS8SQMDMz8Zv4z_AG4xegRI8ZKTBtcNDVhpRCtlOwMTP5K52CCZnVbVBWrLsFVjHuEMGYET8D3ZmegsdaoBIOF0XS20KbvTHL-AzoPt--w34UUtEmZCQOUIhoNg4fRHcYuCW_CGLsvaIUcnBIpNzduTcqVW8Pew12eG8J-9Cq5PCS8hitXzkeowqEP0aUs3-XNQ1a4BhdWdNHc_OYp2D4_bRavxXL98raYLwtH6lkqLGK6MrLRilYtVgo3LbW4obKVCtuK1flNTeomdzJFW6wJVlSythJSG8roFNyd9vZD-BxNTPzgojJdd3qG4xnOFEGUZPT-hLrQ830YB58P4174wAnjtMlR16jmvbaZffiHxYgfDeJHN_jRDX4yiP4Az2GFew</recordid><startdate>20170908</startdate><enddate>20170908</enddate><creator>Zhang, Dezhong</creator><creator>Liu, Chunyu</creator><creator>Xu, Ruiliang</creator><creator>Yin, Bo</creator><creator>Chen, Yu</creator><creator>Zhang, Xindong</creator><creator>Gao, Fengli</creator><creator>Ruan, Shengping</creator><general>IOP Publishing</general><scope>7X8</scope></search><sort><creationdate>20170908</creationdate><title>The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode</title><author>Zhang, Dezhong ; Liu, Chunyu ; Xu, Ruiliang ; Yin, Bo ; Chen, Yu ; Zhang, Xindong ; Gao, Fengli ; Ruan, Shengping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i259t-f08d4eb6dc3471cc1673f163b7bc1f485484d256cc1eb6371d21c3b874abde383</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>limited dark current and noise</topic><topic>one-step oxidation</topic><topic>pn heterojunction</topic><topic>self-depleting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Dezhong</creatorcontrib><creatorcontrib>Liu, Chunyu</creatorcontrib><creatorcontrib>Xu, Ruiliang</creatorcontrib><creatorcontrib>Yin, Bo</creatorcontrib><creatorcontrib>Chen, Yu</creatorcontrib><creatorcontrib>Zhang, Xindong</creatorcontrib><creatorcontrib>Gao, Fengli</creatorcontrib><creatorcontrib>Ruan, Shengping</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Dezhong</au><au>Liu, Chunyu</au><au>Xu, Ruiliang</au><au>Yin, Bo</au><au>Chen, Yu</au><au>Zhang, Xindong</au><au>Gao, Fengli</au><au>Ruan, Shengping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2017-09-08</date><risdate>2017</risdate><volume>28</volume><issue>36</issue><spage>365505</spage><epage>365505</epage><pages>365505-365505</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (Idark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO2/NiO films, demonstrating a high resistance state and contributing to a lower Idark of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 1014 cm Hz1/2 W−1 for the optimal device. The device with the structure of ITO/TiO2/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6528/aa7bb8</doi><tpages>9</tpages></addata></record> |
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subjects | limited dark current and noise one-step oxidation pn heterojunction self-depleting |
title | The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode |
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