The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode

A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (Idark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the...

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Veröffentlicht in:Nanotechnology 2017-09, Vol.28 (36), p.365505-365505
Hauptverfasser: Zhang, Dezhong, Liu, Chunyu, Xu, Ruiliang, Yin, Bo, Chen, Yu, Zhang, Xindong, Gao, Fengli, Ruan, Shengping
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container_end_page 365505
container_issue 36
container_start_page 365505
container_title Nanotechnology
container_volume 28
creator Zhang, Dezhong
Liu, Chunyu
Xu, Ruiliang
Yin, Bo
Chen, Yu
Zhang, Xindong
Gao, Fengli
Ruan, Shengping
description A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO2/NiO pn heterojunction was demonstrated and exhibited lower dark current (Idark) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO2/NiO films, demonstrating a high resistance state and contributing to a lower Idark of 0.033 nA, two orders of magnitude lower than that of the single-material devices. Under UV illumination, the interface self-depleting effect arising from the dissociation and accumulation of photogenerated carriers was eliminated, ensuring loss-free responsivity (R) and a remarkable specific detectivity (D*) of 1.56 × 1014 cm Hz1/2 W−1 for the optimal device. The device with the structure of ITO/TiO2/NiO/Au was measured to prove the mechanisms of interface self-depleting in dark and elimination of the depletion layer under UV illumination. Meanwhile, shortened decay time was achieved in the pn heterojunction UV photodetector. This suggests that the self-depleting devices possess the potential to further enhance photodetection performance.
doi_str_mv 10.1088/1361-6528/aa7bb8
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subjects limited dark current and noise
one-step oxidation
pn heterojunction
self-depleting
title The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO2/NiO pn heterojunction and Ni/Au composite electrode
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