Preferred diffusion paths for copper electromigration by in situ transmission electron microscopy

•Electromigration of copper interconnect was directly observed by in situ TEM study.•High-angle grain boundaries on free surfaces are the preferred Cu diffusion paths.•Depending on the orientation, twin boundaries can accelerate the electromigration.•Hillock development accompanies grain growth with special grain boundaries. Ionic transport in the reverse direction of an electric field is caused by momentum transfer from free electrons to metal ions, i.e., electromigration (EM), which is a critical factor leading to copper (Cu) interconnect failure in integrated circuits under extreme operating conditions. We investigated Cu self-diffusion paths under electrical bias using in situ transmission electron microscopy (TEM). An electric current was applied to multigrain Cu lines in the TEM instrument for durations of up to the order of 104s to trace EM-induced Cu movement around voids and hillocks. Combining this approach with scanning nanobeam diffraction, we observed that high-angle grain boundaries exposed to the free surface are the most favored paths for Cu EM, rather than a specific orientation within the grain. On hillocks of accumulated Cu atoms, we directly observed grain growth, accompanied by the formation of Σ7 high-mobile and Σ3 twin coincidence site lattice boundaries for effective growth. This study provides insight into the EM mechanism to improve the reliability of metal interconnect design.