Characterization of a Ge sub(1-x-y) Si sub(y) Sn sub(x)/Ge sub(1-x) Sn sub(x) multiple quantum well structure grown by sputtering epitaxy

A high-quality Ge sub(0.88) Si sub(0.08) Sn sub(0.04)/Ge sub(0.94) Sn sub(0.06) multiple quantum well (MQW) structure was grown on a Ge (001) substrate by sputtering epitaxy. The MQW structure was characterized by high-resolution x-ray diffraction and transmission electron microscopy. Surface-illumi...

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Veröffentlicht in:	Optics letters 2017-04, Vol.42 (8), p.1608-1611
Hauptverfasser:	Zheng, Jun, Wang, Suyuan, Cong, Hui, Fenrich, Colleen S, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Harris, James S, Wang, Qiming
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Epitaxy Mathematical analysis Quantum wells Sputtering Transmission electron microscopy Wavelengths X ray diffraction
Online-Zugang:	Volltext
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