Characterization of a Ge sub(1-x-y) Si sub(y) Sn sub(x)/Ge sub(1-x) Sn sub(x) multiple quantum well structure grown by sputtering epitaxy

A high-quality Ge sub(0.88) Si sub(0.08) Sn sub(0.04)/Ge sub(0.94) Sn sub(0.06) multiple quantum well (MQW) structure was grown on a Ge (001) substrate by sputtering epitaxy. The MQW structure was characterized by high-resolution x-ray diffraction and transmission electron microscopy. Surface-illuminated Ge sub(0.88) Si sub(0.08) Sn sub(0.04)/Ge sub(0.94) Sn sub(0.06) MQW pin photodetectors were fabricated with cutoff wavelengths of up to 2140 nm. The analysis of transitions from spectral response was fitted well with the theoretical calculations. Results suggest that sputtering epitaxy is a promising method for preparing high-quality low-dimensional Sn-based group IV materials and that Ge sub(1-x-y) Si sub(y) Sn sub(x)/Ge sub(1-x) Sn sub(x) MQWs have potential applications in the development of efficient Si-based photonic devices.