Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Laser diodes with a stripe contact 100 μm wide demon...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2017-04, Vol.47 (3), p.272-274
Hauptverfasser: Marmalyuk, A.A., Ryaboshtan, Yu.L., Gorlachuk, P.V., Ladugin, M.A., Padalitsa, A.A., Slipchenko, S.O., Lyutetskiy, A.V., Veselov, D.A., Pikhtin, N.A.
Format: Artikel
Sprache:eng
Schlagworte:
AlGaInAs/InP heterostructure
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact
Continuous radiation
CRYSTAL DOPING
Doping
eye-safe spectral region
Heat resistance
HEAT RESISTANT MATERIALS
Heterostructures
INDIUM ARSENIDES
INDIUM PHOSPHIDES
laser diode
Laser diodes
Lasers
LOSSES
MOVPE
PULSES
Quantum electronics
Room temperature
SEMICONDUCTOR LASERS
Semiconductors
TEMPERATURE RANGE 0273-0400 K
Thermal resistance
WAVEGUIDES
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Zusammenfassung:Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Laser diodes with a stripe contact 100 μm wide demonstrate at room temperature an output optical power exceeding 4 W in a continuous-wave mode and exceeding 20 W in a pulsed mode.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL16294