Hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors

We demonstrate hybrid integration of modified uni-traveling carrier photodiodes on a multi-layer silicon nitride platform using total reflection mirrors etched by focused ion beam. The hybrid photodetectors show external responsivity of 0.15 A/W and bandwidth of 3.5 GHz for devices with a diameter of 80 µm. The insertion loss of the waveguide is 3 dB and the coupling efficiency of the total reflection mirror is -3 dB. The highest RF output power is -0.5 dBm measured at 3 GHz with 9 mA photocurrent and -9 V bias.