Radiation performance of planar junctionless devices and junctionless SRAMs

The objective of this work is to analyze the radiation performance of the planar junctionless devices and junctionless device-based SRAMs. Bulk planar junctionless transistor (BPJLT) and silicon-on-insulator planar junctionless transistors (SOIPJLT) under heavy ions irradiation have been studied usi...

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Veröffentlicht in:	Journal of computational electronics 2016-03, Vol.15 (1), p.61-66
Hauptverfasser:	Vinodhkumar, N., Srinivasan, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Computer simulation Devices Electrical Engineering Electronics Engineering Error analysis Heavy ions Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Optical and Electronic Materials Radiation Semiconductor devices Simulation Soft errors Static random access memory Theoretical Transistors
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Beschreibung
Zusammenfassung:	The objective of this work is to analyze the radiation performance of the planar junctionless devices and junctionless device-based SRAMs. Bulk planar junctionless transistor (BPJLT) and silicon-on-insulator planar junctionless transistors (SOIPJLT) under heavy ions irradiation have been studied using TCAD simulations. 6T-SRAM cells built up of BPJLTs and SOIPJLTs have been investigated for their soft error performance. Even though the bipolar amplification of the SOIPJLT is more compared to BPJLT, the soft error performance of the SOIPJLT SRAM is better compared to BPJLT SRAM.
ISSN:	1569-8025 1572-8137
DOI:	10.1007/s10825-015-0748-3