Enhanced field emission behavior of layered MoSe sub(2)

Herein, we report one step facile chemical vapor deposition method for synthesis of single-layer MoSe sub(2) nanosheets with average lateral dimension ~60 [mu]m on 300 nm SiO sub(2)/Si and n-type silicon substrates and field emission investigation of MoSe sub(2)/Si at the base pressure of ~1 x 10 super(-8) mbar. The morphological and structural analyses of the as-deposited single-layer MoSe sub(2) nanosheets were carried out using an optical microscopy, Raman spectroscopy and atomic force microscopy. Furthermore, the values of turn-on and threshold fields required to extract an emission current densities of 1 and 10 [mu]A cm super(-2), are found to be ~1.9 and ~2.3 V [mu]m super(-1), respectively. Interestingly, the MoSe sub(2) nanosheet emitter delivers maximum field emission current density of ~1.5 mA cm super(-2) at a relatively lower applied electric field of ~3.9 V [mu]m super(-1). The long term operational current stability recorded at the preset values of 35 [mu]A over 3 hr duration and is found to be very good. The observed results demonstrates that the layered MoSe sub(2) nanosheet based field emitter can open up many opportunities for their potential application as an electron source in flat panel display, transmission electron microscope, and x-ray generation. Thus, the facile one step synthesis approach and robust nature of single-layer MoSe sub(2) nanosheets emitter can provide prospects for the future development of practical electron sources.