Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m super(-2)

Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m super(-2)

Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m super(-2), low turn-...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2017-04, Vol.13 (13), p.np-np
Hauptverfasser: Wang, Hung Chia, Zhang, Heng, Chen, Hao Yue, Yeh, Han Cheng, Tseng, Mei Rurng, Chung, Ren Jei, Chen, Shuming, Liu, Ru Shi
Format: Artikel
Sprache:eng
Schlagworte:
Brightness
Cadmium
Devices
Light emitting diodes
Quantum dots
Voltage
Zinc sulfides
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m super(-2), low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W super(-1)).
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201603962