Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride

Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride

Room‐temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2017-03, Vol.29 (12), p.np-n/a
Hauptverfasser: Berhane, Amanuel M., Jeong, Kwang‐Yong, Bodrog, Zoltán, Fiedler, Saskia, Schröder, Tim, Triviño, Noelia Vico, Palacios, Tomás, Gali, Adam, Toth, Milos, Englund, Dirk, Aharonovich, Igor
Format: Artikel
Sprache:eng
Schlagworte:
cubic inclusions
Cubic lattice
Diodes
Emission
Emitters
gallium nitride wafer
Gallium nitrides
Hexagonal lattice
Inclusions
Luminescence
Materials science
narrow linewidth
Narrowband
Photon emission
point defects
Room temperature
single‐photon sources
Spectral emittance
Substrates
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Room‐temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201605092