Heterogeneous integration of lithium niobate and siliconnitride waveguides for wafer-scale photonic integrated circuits onsilicon

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si sub(3) N sub(4)) waveguide layer on silicon. It not only p...

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Veröffentlicht in:Optics letters 2017-02, Vol.42 (4), p.803-806
Hauptverfasser: Chang, Lin, Pfeiffer, Martin H P, Volet, Nicolas, Zervas, Michael, Peters, Jon D, Manganelli, Costanza L, Stanton, Eric J, Li, Yifei, Kippenberg, Tobias J, Bowers, John E
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Sprache:eng
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Zusammenfassung:An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si sub(3) N sub(4)) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si sub(3) N sub(4) and the LN-Si sub(3) N sub(4) waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.42.000803