Heterogeneous integration of lithium niobate and siliconnitride waveguides for wafer-scale photonic integrated circuits onsilicon
An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si sub(3) N sub(4)) waveguide layer on silicon. It not only p...
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Veröffentlicht in: | Optics letters 2017-02, Vol.42 (4), p.803-806 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si sub(3) N sub(4)) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si sub(3) N sub(4) and the LN-Si sub(3) N sub(4) waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications. |
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ISSN: | 0146-9592 1539-4794 |
DOI: | 10.1364/OL.42.000803 |