Comparative study on noise characteristics of As and Sb‐based high electron mobility transistors

We study comparatively the RF and the noise characteristics for the In0.7Ga0.3As, InAs/AlSb and InSb high electron mobility transistors (HEMTs) by using the quantum corrected Monte Carlo (QC‐MC) simulation. The increase in the current fluctuation with Vds is caused by the increase in the electron velocity variance σv2 (i.e., the electron heating); this indicates clearly that the low Vds operation is essential to lowering . The smaller electron effective m* results in the larger σv2 and thus the larger , yet it allows the low Vds operation through the higher μ. The InSb HEMT with the channel of the smallest m* overcomes the inherent nature of the larger through the ability of the lower Vds operation along with the larger gm. Eventually, the InSb HEMT shows the smallest minimum noise figure NFmin of 0.31 dB with the associated gain Gass of 12.4 dB at 100 GHz and the highest cutoff frequency fT of 1.8 THz at Vds of 0.2 V. These results indicate the potential of the InSb HEMT for the ultra‐low power, ultra‐high frequency, and the ultra‐low noise transistor.