Deposition of highly c-axis-oriented ScAlN thin films at different sputtering power

Highly c-axis-oriented (002) of Sc x Al 1−x N thin films with high Sc concentration (x) have drawn a significant attention in the bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators because of their excellent piezoelectric performance. This paper presents the preparation and characterization of 15% scandium doped aluminum nitride (ScAlN) and pure AlN films on the silicon substrate with variable of sputtering power from 100 to 160 W. The crystalline degree, surface morphology and piezoelectric response prepared by RF magnetron sputtering are investigated by corresponding technologies. It shows that the best growth of characteristic peaks (002) and surface morphology for Sc 0.15 Al 0.85 N films are deposited at 135 W. Meanwhile, the piezoelectric response of Sc 0.15 Al 0.85 N is generally enhanced for two times larger than that of pure AlN films.