Multifunctional Organic‐Semiconductor Interfacial Layers for Solution‐Processed Oxide‐Semiconductor Thin‐Film Transistor

The stabilization and control of the electrical properties in solution‐processed amorphous‐oxide semiconductors (AOSs) is crucial for the realization of cost‐effective, high‐performance, large‐area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS‐based thin‐film transistors (TFTs). In this study, the authors employ a multifunctional organic‐semiconductor (OSC) interlayer as a solution‐processed thin‐film passivation layer and a charge‐transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper‐ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution‐processed organic interlayer enables the production of low‐cost, high‐performance oxide semiconductor‐based circuits. Using multifunctional organic‐semiconductor interfacial layers as a charge‐transfer dopant and electrically active passivation layer, the electrical properties of solution‐processed amorphous‐oxide‐semiconductor thin‐film transistors with copper electrodes are stabilized and fine‐tuned to targeted values. These results enable the production of low‐cost, high‐performance oxide‐semiconductor‐based circuits.