Single crystalline SnO sub(2) thin films grown on m -plane sapphire substrate by mist chemical vapor deposition

Tin dioxide (SnO sub(2)) thin films, as a candidate for realizing next-generation electrical and optical devices, were grown on 2-inch diameter m -plane sapphire substrates by mist chemical vapour deposition at atmospheric pressure. The SnO sub(2) thin films were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD) in theta -2 theta and phi scanning modes, and electron backscatter diffraction (EBSD). Although the SEM and AFM images showed a relatively rough surface morphology, it was found from the XRD and EBSD measurements that SnO sub(2) films were epitaxially grown on the substrates under optimised growth condition. Epitaxial growth of SnO sub(2) thin film growth at three typical areas on the substrate was confirmed by the EBSD measurements. It is likely that the single crystalline SnO sub(2) (001) thin film was formed across the 2-inch sapphire substrate. Finally, the second SnO sub(2) layer was overgrown on the above single crystalline SnO sub(2) thin film, which functioned as a buffer layer. This method which drastically improved surface roughness of the second SnO sub(2) layer.