In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures

In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures

We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray diffraction and reflection h...

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Veröffentlicht in:Physica Status Solidi. B: Basic Solid State Physics 2017-02, Vol.254 (2), p.np-n/a
Hauptverfasser: Mousley, P. J., Burrows, C. W., Ashwin, M. J., Takahasi, M., Sasaki, T., Bell, G. R.
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
GaAs
Gallium arsenide
Half‐metallic ferromagnets
MnSb
Molecular beam epitaxy
Monitoring
Reflection
Solid state physics
spintronics
Synchrotrons
X ray diffraction
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Zusammenfassung:We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) and In0.5Ga0.5As(111) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray diffraction and reflection high energy electron diffraction. We show data on strain relaxation and growth mode, and discuss the epitaxial relationship between GaAs(001) and MnSb(11‾01). Schematic of the molecular beam epitaxy/X‐ray diffraction in situ experiment and typical 2D detector data, with GaAs(111) and MnSb(0001) diffraction features.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201600503