Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz
•First UHF Q factor for the structure «Al/(001)AlN/Mo/(100) diamond» was investigated within 1 up to 20GHz.•Record-breaking Q·f quality parameter up to 2.7·1014Hz was obtained close to 20GHz.•Synthetic IIa-type diamond as the HBAR substrate possesses of excellent acoustic microwave properties. First...
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Veröffentlicht in: | Ultrasonics 2017-07, Vol.78, p.162-165 |
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creator | Sorokin, B.P. Kvashnin, G.M. Novoselov, A.S. Bormashov, V.S. Golovanov, A.V. Burkov, S.I. Blank, V.D. |
description | •First UHF Q factor for the structure «Al/(001)AlN/Mo/(100) diamond» was investigated within 1 up to 20GHz.•Record-breaking Q·f quality parameter up to 2.7·1014Hz was obtained close to 20GHz.•Synthetic IIa-type diamond as the HBAR substrate possesses of excellent acoustic microwave properties.
First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·1014Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer’s acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band. |
doi_str_mv | 10.1016/j.ultras.2017.01.014 |
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First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·1014Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer’s acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band.</description><identifier>ISSN: 0041-624X</identifier><identifier>EISSN: 1874-9968</identifier><identifier>DOI: 10.1016/j.ultras.2017.01.014</identifier><identifier>PMID: 28363121</identifier><language>eng</language><publisher>Netherlands: Elsevier B.V</publisher><subject>Aluminum nitride ; Diamond ; HBAR ; Piezoelectric layered structure ; Quality factor ; Quality parameter ; UHF acoustic attenuation</subject><ispartof>Ultrasonics, 2017-07, Vol.78, p.162-165</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright © 2017 Elsevier B.V. All rights reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-4409-9589</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.ultras.2017.01.014$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,781,785,3551,27929,27930,46000</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28363121$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Sorokin, B.P.</creatorcontrib><creatorcontrib>Kvashnin, G.M.</creatorcontrib><creatorcontrib>Novoselov, A.S.</creatorcontrib><creatorcontrib>Bormashov, V.S.</creatorcontrib><creatorcontrib>Golovanov, A.V.</creatorcontrib><creatorcontrib>Burkov, S.I.</creatorcontrib><creatorcontrib>Blank, V.D.</creatorcontrib><title>Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz</title><title>Ultrasonics</title><addtitle>Ultrasonics</addtitle><description>•First UHF Q factor for the structure «Al/(001)AlN/Mo/(100) diamond» was investigated within 1 up to 20GHz.•Record-breaking Q·f quality parameter up to 2.7·1014Hz was obtained close to 20GHz.•Synthetic IIa-type diamond as the HBAR substrate possesses of excellent acoustic microwave properties.
First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·1014Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer’s acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band.</description><subject>Aluminum nitride</subject><subject>Diamond</subject><subject>HBAR</subject><subject>Piezoelectric layered structure</subject><subject>Quality factor</subject><subject>Quality parameter</subject><subject>UHF acoustic attenuation</subject><issn>0041-624X</issn><issn>1874-9968</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo1kU1r3DAQhkVpaLZp_0EpOvbizchWLPlSKCFfEOilgd6EJI-JFttyJTnN5pZ_3lk2FSM0DI9eZuZl7IuArQDRnu-261iSzdsahNqCoJDv2EZoJauua_V7tgGQompr-fuUfcx5B0Ro0Xxgp7Vu2kbUYsNer559KLaEOPM48Mf9ginHOXhufVxzoeSvfcLMw8z7YKc495WzGXu-BHyJOKIviaDR7jFRNZe0-rIm5CRYHpFPwad4kOBDwj8rzj6Q2rrwEnkNN7cvn9jJYMeMn9_eM_ZwffXr8ra6_3lzd_njvkJBp_Kqd665QJBaNd1g3dB0SkMj6QrtQICS2PtW9Z0e2ta1YD1euHqQDryiP2fs21F3SZH6yMVMIXscRzsjTWqE1iQECiShX9_Q1U3YmyWFyaa9-b82Ar4fAaSGnwImk2ms2WMfEi3E9DEYAebgk9mZo0_m4JMBQSGbf-chiJY</recordid><startdate>201707</startdate><enddate>201707</enddate><creator>Sorokin, B.P.</creator><creator>Kvashnin, G.M.</creator><creator>Novoselov, A.S.</creator><creator>Bormashov, V.S.</creator><creator>Golovanov, A.V.</creator><creator>Burkov, S.I.</creator><creator>Blank, V.D.</creator><general>Elsevier B.V</general><scope>NPM</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0002-4409-9589</orcidid></search><sort><creationdate>201707</creationdate><title>Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz</title><author>Sorokin, B.P. ; Kvashnin, G.M. ; Novoselov, A.S. ; Bormashov, V.S. ; Golovanov, A.V. ; Burkov, S.I. ; Blank, V.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e1111-c7dbb35e048739fabf397803480318b01074edc67d98f66b60ace5b2f4b0c7873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum nitride</topic><topic>Diamond</topic><topic>HBAR</topic><topic>Piezoelectric layered structure</topic><topic>Quality factor</topic><topic>Quality parameter</topic><topic>UHF acoustic attenuation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sorokin, B.P.</creatorcontrib><creatorcontrib>Kvashnin, G.M.</creatorcontrib><creatorcontrib>Novoselov, A.S.</creatorcontrib><creatorcontrib>Bormashov, V.S.</creatorcontrib><creatorcontrib>Golovanov, A.V.</creatorcontrib><creatorcontrib>Burkov, S.I.</creatorcontrib><creatorcontrib>Blank, V.D.</creatorcontrib><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Ultrasonics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sorokin, B.P.</au><au>Kvashnin, G.M.</au><au>Novoselov, A.S.</au><au>Bormashov, V.S.</au><au>Golovanov, A.V.</au><au>Burkov, S.I.</au><au>Blank, V.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz</atitle><jtitle>Ultrasonics</jtitle><addtitle>Ultrasonics</addtitle><date>2017-07</date><risdate>2017</risdate><volume>78</volume><spage>162</spage><epage>165</epage><pages>162-165</pages><issn>0041-624X</issn><eissn>1874-9968</eissn><abstract>•First UHF Q factor for the structure «Al/(001)AlN/Mo/(100) diamond» was investigated within 1 up to 20GHz.•Record-breaking Q·f quality parameter up to 2.7·1014Hz was obtained close to 20GHz.•Synthetic IIa-type diamond as the HBAR substrate possesses of excellent acoustic microwave properties.
First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·1014Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer’s acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band.</abstract><cop>Netherlands</cop><pub>Elsevier B.V</pub><pmid>28363121</pmid><doi>10.1016/j.ultras.2017.01.014</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4409-9589</orcidid></addata></record> |
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subjects | Aluminum nitride Diamond HBAR Piezoelectric layered structure Quality factor Quality parameter UHF acoustic attenuation |
title | Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz |
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