Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz
•First UHF Q factor for the structure «Al/(001)AlN/Mo/(100) diamond» was investigated within 1 up to 20GHz.•Record-breaking Q·f quality parameter up to 2.7·1014Hz was obtained close to 20GHz.•Synthetic IIa-type diamond as the HBAR substrate possesses of excellent acoustic microwave properties. First...
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Veröffentlicht in: | Ultrasonics 2017-07, Vol.78, p.162-165 |
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Sprache: | eng |
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Zusammenfassung: | •First UHF Q factor for the structure «Al/(001)AlN/Mo/(100) diamond» was investigated within 1 up to 20GHz.•Record-breaking Q·f quality parameter up to 2.7·1014Hz was obtained close to 20GHz.•Synthetic IIa-type diamond as the HBAR substrate possesses of excellent acoustic microwave properties.
First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·1014Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer’s acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band. |
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ISSN: | 0041-624X 1874-9968 |
DOI: | 10.1016/j.ultras.2017.01.014 |