Growth of arsenic doped ZnO films using a finite surface doping source by metal organic chemical vapor deposition

Arsenic doped ZnO films are prepared using a pre-deposited GaAs finite surface source on sapphire substrates by a MOCVD method. Their conductivity and optical properties are closely related to the annealing process. The as-grown ZnO film shows n-type conductivity with weak FA emission. The in situ annealed sample shows p-type conductivity. The As sub(Zn)-2V sub(Zn) acceptor level is confirmed by low-temperature photoluminescence measurement. The post annealed ZnO film appears to be n-type, which is attributed to the arsenic surface enrichment and the compensation of introduced donor like defects. Our method could be widely used in fabricating arsenic doped p-type ZnO related photoelectric devices.