Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2016-02, Vol.122 (2), p.1-10, Article 108
Hauptverfasser:	Wu, Zhengyuan, Shen, Xiyang, Xiong, Huan, Li, Qingfei, Kang, Junyong, Fang, Zhilai, Lin, Feng, Yang, Bilan, Lin, Shilin, Shen, Wenzhong, Zhang, Tong-Yi
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Characterization and Evaluation of Materials Condensed Matter Physics Indium Indium gallium nitrides Light emission Luminescence Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Pretreatment Processes Quantum wells Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
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