Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2016-02, Vol.122 (2), p.1-10, Article 108
Hauptverfasser:	Wu, Zhengyuan, Shen, Xiyang, Xiong, Huan, Li, Qingfei, Kang, Junyong, Fang, Zhilai, Lin, Feng, Yang, Bilan, Lin, Shilin, Shen, Wenzhong, Zhang, Tong-Yi
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Characterization and Evaluation of Materials Condensed Matter Physics Indium Indium gallium nitrides Light emission Luminescence Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Pretreatment Processes Quantum wells Surfaces and Interfaces Thin Films
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Beschreibung
Zusammenfassung:	Interface modification of high indium content InGaN/GaN quantum wells was carried out by Mg pretreatment of the GaN barrier surface. The indium in the Mg-pretreated InGaN layer was homogeneously distributed, making the interfaces abrupt. The improved interface quality greatly enhanced light emission capacity. The cathodoluminescence intensity of the Mg-pretreated InGaN/GaN quantum wells was correspondingly much stronger than those of the InGaN/GaN quantum wells without Mg pretreatment.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-016-9661-2