Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure
We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures T = ( 2.9 ÷ 50 ) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding...
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| Veröffentlicht in: | Journal of low temperature physics 2016-12, Vol.185 (5-6), p.665-672 |
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| container_issue | 5-6 |
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| container_title | Journal of low temperature physics |
| container_volume | 185 |
| creator | Arapov, Yu. G. Gudina, S. V. Neverov, V. N. Podgornykh, S. M. Popov, M. R. Harus, G. I. Shelushinina, N. G. Yakunin, M. V. Dvoretsky, S. A. Mikhailov, N. N. |
| description | We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields
B
up to 9
T
and temperatures
T
=
(
2.9
÷
50
)
K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices. |
| doi_str_mv | 10.1007/s10909-016-1477-0 |
| format | Article |
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B
up to 9
T
and temperatures
T
=
(
2.9
÷
50
)
K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.</description><identifier>ISSN: 0022-2291</identifier><identifier>EISSN: 1573-7357</identifier><identifier>DOI: 10.1007/s10909-016-1477-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electrical resistivity ; Heterostructures ; Hopping (conductivity) ; Hopping conduction ; Localization ; Low temperature physics ; Magnetic fields ; Magnetic Materials ; Magnetism ; Mercury cadmium tellurides ; Mercury tellurides ; Physics ; Physics and Astronomy ; Quantum Hall effect ; Quantum wells ; Transport</subject><ispartof>Journal of low temperature physics, 2016-12, Vol.185 (5-6), p.665-672</ispartof><rights>Springer Science+Business Media New York 2016</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-2d7542a71837f6caabdcc51d59d8c155454ef7429ea54fd976a054895ba834c33</citedby><cites>FETCH-LOGICAL-c349t-2d7542a71837f6caabdcc51d59d8c155454ef7429ea54fd976a054895ba834c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10909-016-1477-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10909-016-1477-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Arapov, Yu. G.</creatorcontrib><creatorcontrib>Gudina, S. V.</creatorcontrib><creatorcontrib>Neverov, V. N.</creatorcontrib><creatorcontrib>Podgornykh, S. M.</creatorcontrib><creatorcontrib>Popov, M. R.</creatorcontrib><creatorcontrib>Harus, G. I.</creatorcontrib><creatorcontrib>Shelushinina, N. G.</creatorcontrib><creatorcontrib>Yakunin, M. V.</creatorcontrib><creatorcontrib>Dvoretsky, S. A.</creatorcontrib><creatorcontrib>Mikhailov, N. N.</creatorcontrib><title>Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure</title><title>Journal of low temperature physics</title><addtitle>J Low Temp Phys</addtitle><description>We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields
B
up to 9
T
and temperatures
T
=
(
2.9
÷
50
)
K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electrical resistivity</subject><subject>Heterostructures</subject><subject>Hopping (conductivity)</subject><subject>Hopping conduction</subject><subject>Localization</subject><subject>Low temperature physics</subject><subject>Magnetic fields</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Mercury cadmium tellurides</subject><subject>Mercury tellurides</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum Hall effect</subject><subject>Quantum wells</subject><subject>Transport</subject><issn>0022-2291</issn><issn>1573-7357</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KxDAYRYMoOI4-gLuAGzfR_DbJUge1giAOo-AqZNK0dOjPmLTCvL0Z60IEV9_m3Mt3DwDnBF8RjOV1JFhjjTDJEOFSInwAZkRIhiQT8hDMMKYUUarJMTiJcYMx1ipjM_D-ZkNt141HS9tVHub9dlt3FVz0XTG6of6shx2sO_gy2m4YW5jbpoFLX9Wth2UfYF6tPLq10Rcw94MPfRxCyo3Bn4Kj0jbRn_3cOXi9v1stcvT0_PC4uHlCjnE9IFpIwamVRDFZZs7adeGcIIXQhXJECC64LyWn2lvBy0LLzGLBlRZrqxh3jM3B5dS7Df3H6ONg2jo63zS28_0YDVEqjWcZEwm9-INu-jF06btvSvGMq30hmSiX1sTgS7MNdWvDzhBs9rLNJNsk2WYv2-CUoVMmJjZ5DL-a_w19ATWbgPE</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Arapov, Yu. G.</creator><creator>Gudina, S. V.</creator><creator>Neverov, V. N.</creator><creator>Podgornykh, S. M.</creator><creator>Popov, M. R.</creator><creator>Harus, G. I.</creator><creator>Shelushinina, N. G.</creator><creator>Yakunin, M. V.</creator><creator>Dvoretsky, S. A.</creator><creator>Mikhailov, N. N.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20161201</creationdate><title>Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure</title><author>Arapov, Yu. G. ; Gudina, S. V. ; Neverov, V. N. ; Podgornykh, S. M. ; Popov, M. R. ; Harus, G. I. ; Shelushinina, N. G. ; Yakunin, M. V. ; Dvoretsky, S. A. ; Mikhailov, N. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-2d7542a71837f6caabdcc51d59d8c155454ef7429ea54fd976a054895ba834c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electrical resistivity</topic><topic>Heterostructures</topic><topic>Hopping (conductivity)</topic><topic>Hopping conduction</topic><topic>Localization</topic><topic>Low temperature physics</topic><topic>Magnetic fields</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Mercury cadmium tellurides</topic><topic>Mercury tellurides</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum Hall effect</topic><topic>Quantum wells</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arapov, Yu. G.</creatorcontrib><creatorcontrib>Gudina, S. V.</creatorcontrib><creatorcontrib>Neverov, V. N.</creatorcontrib><creatorcontrib>Podgornykh, S. M.</creatorcontrib><creatorcontrib>Popov, M. R.</creatorcontrib><creatorcontrib>Harus, G. I.</creatorcontrib><creatorcontrib>Shelushinina, N. G.</creatorcontrib><creatorcontrib>Yakunin, M. V.</creatorcontrib><creatorcontrib>Dvoretsky, S. A.</creatorcontrib><creatorcontrib>Mikhailov, N. N.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of low temperature physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arapov, Yu. G.</au><au>Gudina, S. V.</au><au>Neverov, V. N.</au><au>Podgornykh, S. M.</au><au>Popov, M. R.</au><au>Harus, G. I.</au><au>Shelushinina, N. G.</au><au>Yakunin, M. V.</au><au>Dvoretsky, S. A.</au><au>Mikhailov, N. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure</atitle><jtitle>Journal of low temperature physics</jtitle><stitle>J Low Temp Phys</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>185</volume><issue>5-6</issue><spage>665</spage><epage>672</epage><pages>665-672</pages><issn>0022-2291</issn><eissn>1573-7357</eissn><abstract>We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields
B
up to 9
T
and temperatures
T
=
(
2.9
÷
50
)
K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10909-016-1477-0</doi><tpages>8</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Condensed Matter Physics Electrical resistivity Heterostructures Hopping (conductivity) Hopping conduction Localization Low temperature physics Magnetic fields Magnetic Materials Magnetism Mercury cadmium tellurides Mercury tellurides Physics Physics and Astronomy Quantum Hall effect Quantum wells Transport |
| title | Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure |
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