Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures T = ( 2.9 ÷ 50 ) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.