Hybrid organic–inorganic inks flatten the energy landscape in colloidal quantum dot solids

Bandtail states in disordered semiconductor materials result in losses in open-circuit voltage ( V oc ) and inhibit carrier transport in photovoltaics. For colloidal quantum dot (CQD) films that promise low-cost, large-area, air-stable photovoltaics, bandtails are determined by CQD synthetic polydis...

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Veröffentlicht in:Nature materials 2017-02, Vol.16 (2), p.258-263
Hauptverfasser: Liu, Mengxia, Voznyy, Oleksandr, Sabatini, Randy, García de Arquer, F. Pelayo, Munir, Rahim, Balawi, Ahmed Hesham, Lan, Xinzheng, Fan, Fengjia, Walters, Grant, Kirmani, Ahmad R., Hoogland, Sjoerd, Laquai, Frédéric, Amassian, Aram, Sargent, Edward H.
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Sprache:eng
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Zusammenfassung:Bandtail states in disordered semiconductor materials result in losses in open-circuit voltage ( V oc ) and inhibit carrier transport in photovoltaics. For colloidal quantum dot (CQD) films that promise low-cost, large-area, air-stable photovoltaics, bandtails are determined by CQD synthetic polydispersity and inhomogeneous aggregation during the ligand-exchange process. Here we introduce a new method for the synthesis of solution-phase ligand-exchanged CQD inks that enable a flat energy landscape and an advantageously high packing density. In the solid state, these materials exhibit a sharper bandtail and reduced energy funnelling compared with the previous best CQD thin films for photovoltaics. Consequently, we demonstrate solar cells with higher V oc and more efficient charge injection into the electron acceptor, allowing the use of a closer-to-optimum bandgap to absorb more light. These enable the fabrication of CQD solar cells made via a solution-phase ligand exchange, with a certified power conversion efficiency of 11.28%. The devices are stable when stored in air, unencapsulated, for over 1,000 h. An improved ligand-exchange process allows the realization of solution-deposited films of quantum dots with reduced energetic disorder and, as a result, solar cells with improved open-circuit voltage, charge-carrier transport and stability.
ISSN:1476-1122
1476-4660
DOI:10.1038/nmat4800