Effect of junction recombination velocity of electrical parameters of a vertical parallel silicon solar cell under frequency modulation

This study investigates a theoretical study based on the determination of electrical parameters in solar cell junction vertical parallel silicon under polychromatic illumination and frequency modulation. From the excess minority carrier’s density in the solar cell, the photocurrent density and the photovoltage are derived. The route of the current voltage density ( I = f (V)) that materializes the behavior of the generator; we have a model on the shunt resistance and the series resistance. The I – V method is used to determine electrical parameters such as resistance and shunt resistance or various junction recombination velocity. From their expressions, we study their pace according to Bode and Nyquist and then extend the study to other electrical parameter. The Bode diagrams of the diffusion capacitance are shown for different junction recombination velocity.