N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing

Phosphorus doping by P implantation and thermal annealing of the BaSi2 epitaxial film grown on the Si(111) substrate has been studied. Raman spectroscopy results show that the structural damage due to P implantation can be almost removed by annealing within 30 and 1s at 500 and 700°C, respectively. The depth profile of P is investigated by secondary ion mass spectroscopy, which reveals considerably slower diffusion kinetics of P at 500°C than 700°C. The activation energy of the diffusion is roughly estimated to be 2eV from the temperature dependence. The Hall measurement of the P-doped films clarifies that the P impurity is an electron donor in BaSi2. The average electron density up to the order of 1018cm−3 is observed. •P doping of BaSi2 epitaxial films by ion implantation and thermal annealing is studied.•Damage is recovered within 30 and 1s at 500 and 700°C, respectively.•Considerably slower P diffusion is observed at 500°C than 700°C.•P impurity is revealed to be an electron donor in BaSi2.•The average electron density up to the order of 1018cm−3 is observed.