Optical and photoelectric properties of Mn-doped ZnS thin film on a flexible indium-tin-oxide/polyethylene terephthalate substrate prepared by pulsed laser deposition

Optical and photoelectric properties of Mn-doped ZnS thin films on indium-tin-oxide (ITO)/polyethylene terephthalate (PET) substrates by pulsed laser deposition (PLD) were investigated. The XRD patterns revealed that the thin film deposited at room temperature (RT) had a wurtzite phase, which changed to a sphalerite phase at a substrate temperature of approximately 100 [degrees]C. The transmittance of the films was approximately 87% in the visible range. The optical bandgap of the film deposited at RT was 3.29 eV, which increased to 3.361 eV with increasing substrate temperature to 200 [degrees]C. The photoluminescence (PL) intensity at 468 nm and the photocurrent by UV irradiation increased in proportion to the substrate temperature. The present results imply that Mn-doped ZnS films deposited on flexible PET substrates are useful for fabricating flexible optoelectronic devices such as flexible UV detectors.