Molecular Alignment and Electronic Structure of N,N′‑Dibutyl-3,4,9,10-perylene-tetracarboxylic-diimide Molecules on MoS2 Surfaces

The molecular orientation of organic semiconductors on a solid surface could be an indispensable factor to determine the electrical performance of organic-based devices. Despite its fundamental prominence, a clear description of the emergent two-dimensional layered material–organic interface is not...

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Veröffentlicht in:ACS applied materials & interfaces 2017-02, Vol.9 (6), p.5566-5573
Hauptverfasser: Arramel, Yin, Xinmao, Wang, Qixing, Zheng, Yu J, Song, Zhibo, bin Hassan, Mohammad H, Qi, Dianyu, Wu, Jishan, Rusydi, Andrivo, Wee, Andrew T. S
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Sprache:eng
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Zusammenfassung:The molecular orientation of organic semiconductors on a solid surface could be an indispensable factor to determine the electrical performance of organic-based devices. Despite its fundamental prominence, a clear description of the emergent two-dimensional layered material–organic interface is not fully understood yet. In this study, we reveal the molecular alignment and electronic structure of thermally deposited N,N′-dibutyl-3,4,9,10-perylene-dicarboximide (PTCDI-C4) molecules on natural molybdenum disulfide (MoS2) using near-edge X-ray absorption fine structure spectroscopy (NEXAFS). The average tilt angle determination reveals that the anisotropy in the π* symmetry transition of the carbon K-edge (284–288 eV range) is present at the sub-monolayer regime. Supported by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and resonant photoemission spectroscopy (RPES) measurements, we find that our spectroscopic measurements indicate a weak charge transfer established at the PTCDI-C4/MoS2 interface. Sterical hindrance due to the C4 alkyl chain caused tilting of the molecular plane at the initial thin film deposition. Our result shows a tunable interfacial alignment of organic molecules on transition metal dichalcogenide surfaces effectively enhancing the electronic properties of hybrid organic–inorganic heterostructure devices.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b14000