Synthesis and properties of ultralow dielectric constant porous polyimide films containing trifluoromethyl groups
ABSTRACT In this research, a series of porous copolyimide (co‐PI) films containing trifluoromethyl group (CF3) were facilely prepared via a phase separation process. The co‐PI were synthesized by the reaction of benzophenone‐3,3′,4,4′‐tetracarboxylic dianhydride (BTDA) with two diamines of 4,4′‐diam...
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Veröffentlicht in: | Journal of applied polymer science 2017-02, Vol.134 (8), p.np-n/a |
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Sprache: | eng |
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In this research, a series of porous copolyimide (co‐PI) films containing trifluoromethyl group (CF3) were facilely prepared via a phase separation process. The co‐PI were synthesized by the reaction of benzophenone‐3,3′,4,4′‐tetracarboxylic dianhydride (BTDA) with two diamines of 4,4′‐diaminodiphenyl ether (ODA) and 3‐trifluoromethyl‐4,4'‐diaminodiphenyl ether (FODA) with various molar ratios. The flexible and tough porous co‐PI films with about 300 μm thickness and 8∼10 μm average diameter could be obtained by solution casting conveniently. The thermal properties of the obtained porous co‐PI films were excellent with a glass transition temperature at 270 °C ∼ 280 °C and only 5% weight loss in temperature from 530 °C to 560 °C under nitrogen atmosphere. In addition, the dielectric and hydrophobic properties of porous co‐PI films were remarkably improved owing to the presence of trifluoromethyl groups (CF3) in the polymer chains. Moreover, our synthesized porous co‐PI films also showed good mechanical properties. © 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017, 134, 44494. |
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ISSN: | 0021-8995 1097-4628 |
DOI: | 10.1002/app.44494 |