Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry

We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The crystals are created by cycling atomic layer deposition of three dielectric materials such that the resulting metamaterial is noncentrosymmetric in the direction of the deposit...

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Veröffentlicht in:Optics letters 2015-11, Vol.40 (22), p.5371-5374
Hauptverfasser: Clemmen, Stéphane, Hermans, Artur, Solano, Eduardo, Dendooven, Jolien, Koskinen, Kalle, Kauranen, Martti, Brainis, Edouard, Detavernier, Christophe, Baets, Roel
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Sprache:eng
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Zusammenfassung:We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The crystals are created by cycling atomic layer deposition of three dielectric materials such that the resulting metamaterial is noncentrosymmetric in the direction of the deposition. Characterization of the structures by second-harmonic generation Maker-fringe measurements shows that the main component of their nonlinear susceptibility tensor is about 5 pm/V, which is comparable to well-established materials and more than an order of magnitude greater than reported for a similar crystal [Appl. Phys. Lett.107, 121903 (2015)APPLAB0003-695110.1063/1.4931492]. Our demonstration opens new possibilities for second-order nonlinear effects on CMOS-compatible nanophotonic platforms.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.40.005371