Deposition of copper thin films by plasma enhanced pulsed chemical vapor deposition for metallization of carbon fiber reinforced plastics

Metallization of carbon fiber reinforced plastic (CFRP) materials is a critical issue for protection against environmental attack and improvement of their electrical conductivity. In practice, the process should be preferably carried out below 150°C to avoid epoxy resin decomposition. This work investigated a plasma enhanced pulse chemical vapor deposition process for copper thin film deposition at a temperature as low as 50°C. Copper(I) di-isopropylacetamidinate was used as Cu precursor with high reactivity to H2 plasma at low temperature. At certain experimental conditions (10s Cu precursor pulse and 10s H2 plasma pulse, 100°C), the Cu films deposited on CFRP were pure, continuous, with the resistivity of 4.4μΩcm. The influence of the deposition temperature on copper characteristics has been investigated. •A new plasma enhanced pulse chemical vapor deposition process for copper thin films is proposed.•Metallization of carbon fiber reinforced plastics can be achievable using PEPCVE process.•Growth mechanism of PEPCVD Cu process using [Cu(AMDiPr2)]2 and H2 plasma is discussed.