Large-scale room-temperature synthesis and optical properties of perovskite-related Cs4PbBr6 fluorophores

Currently, metal-halide perovskite semiconductors have attracted enormous attention for their excellent optical performance. However, challenging issues, such as the ability to perform large-scale synthesis as well as the thermal/moisture stability, limit their practical applications. Herein, we dev...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016-12, Vol.4 (45), p.10646-10653
Hauptverfasser: Chen, Daqin, Wan, Zhongyi, Chen, Xiao, Yuan, Yongjun, Zhong, Jiasong
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Sprache:eng
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Zusammenfassung:Currently, metal-halide perovskite semiconductors have attracted enormous attention for their excellent optical performance. However, challenging issues, such as the ability to perform large-scale synthesis as well as the thermal/moisture stability, limit their practical applications. Herein, we developed an inhomogeneous interface reaction strategy in a liquid-liquid immiscible two-phase system to realize the large-scale room temperature synthesis of novel perovskite-related Cs4PbBr6 semiconductors. Although the sizes were on the micrometer scale, the Cs4PbBr6 products exhibited bright green luminescence with a narrow line-width originating from exciton recombination confined in PbBr64- octahedra, and the photoluminescence quantum yields reached 40-45% owing to a large exciton binding energy of 222 meV. Furthermore, temperature cycling experiments demonstrated their excellent thermal stability with repeatable and reversible luminescence, and moisture-resistance experiments showed similar to 65% of quantum yield loss after exposure to air for one month. Finally, a prototype white light-emitting diode device with a low correlated color temperature of 3675 K and a high color rendering index of 83 was constructed using green emissive Cs4PbBr6 and red emissive Eu2+:CaAlSiN3 phosphors, certainly indicating its promising applications in the optoelectronics field.
ISSN:2050-7526
2050-7534
DOI:10.1039/c6tc04036e