facile method for the production of SnS thin films from melt reactions

facile method for the production of SnS thin films from melt reactions

Tin(II)O-ethylxanthate [Sn(S₂COEt)₂] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn₁.₃S and SnS) were reliably produced by s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science 2016-07, Vol.51 (13), p.6166-6172
Hauptverfasser: Al-Shakban, Mundher, Xie, Zhiqiang, Savjani, Nicky, Malik, M. Azad, O’Brien, Paul
Format: Artikel
Sprache:eng
Schlagworte:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Energy dispersive X ray spectroscopy
Energy gaps (solid state)
Fourier transforms
Heating
Infrared analysis
Infrared reflection
Infrared spectroscopy
Materials Science
Melts
Methods
Original Paper
Polymer Sciences
Precursors
Production processes
Raman spectroscopy
Scanning electron microscopy
Solid Mechanics
Spectroscopy
Spectrum analysis
Stoichiometry
Thermogravimetric analysis
Thin films
X-rays
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Tin(II)O-ethylxanthate [Sn(S₂COEt)₂] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn₁.₃S and SnS) were reliably produced by selecting heating temperatures between 200 and 400 °C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S₂COEt)₂] was characterized by thermogravimetric analysis and attenuated total reflection Fourier-transform infrared spectroscopy. The as-prepared SnS films were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, powder X-ray diffractometry, Raman spectroscopy, and UV–Vis spectroscopy.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-016-9906-7