Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

[Display omitted] •We investigate the Si(111) surface prepared in CVD ambient at 1000°C in 950mbar H2.•UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied.•After processing the Si(111) surface is free of contamination and atomically flat.•The surface exhibits a (1×1) reconstruction and monohydride termination.•Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1×1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.