Te-Doped Black Phosphorus Field-Effect Transistors

Te-Doped Black Phosphorus Field-Effect Transistors

Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black‐phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black‐phosphorus devices.

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Veröffentlicht in:Advanced materials (Weinheim) 2016-11, Vol.28 (42), p.9408-9415
Hauptverfasser: Yang, Bingchao, Wan, Bensong, Zhou, Qionghua, Wang, Yue, Hu, Wentao, Lv, Weiming, Chen, Qian, Zeng, Zhongming, Wen, Fusheng, Xiang, Jianyong, Yuan, Shijun, Wang, Jinlan, Zhang, Baoshun, Wang, Wenhong, Zhang, Junying, Xu, Bo, Zhao, Zhisheng, Tian, Yongjun, Liu, Zhongyuan
Format: Artikel
Sprache:eng
Schlagworte:
2D layered materials
black phosphorus
Devices
Doping
Electronic properties
Field effect transistors
Phosphorus
Semiconductor devices
Stability
Te-doping
Transport
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Beschreibung
Zusammenfassung:Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black‐phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black‐phosphorus devices.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201603723