A CMOS Bandgap Reference with Temperature Compensation

A CMOS Bandgap Reference with Temperature Compensation

This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show...

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Veröffentlicht in:Applied Mechanics and Materials 2014-10, Vol.667 (Advances in Computers, Electronics and Mechatronics), p.401-404
Hauptverfasser: Chen, Xi, Shen, Xiao Feng, Huang, Xing Fa, Li, Liang, Xu, Ming Yuan
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
CMOS
Energy gaps (solid state)
MOS devices
Semiconductor devices
Simulation
Temperature compensation
Transistors
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Zusammenfassung:This paper has presented a bandgap reference circuit with high-order temperature compensation. The compensation technique is achieved by using MOS transistor operating in sub-threshold region for reducing high-order TC of Vbe. The circuit is designed in 0.18¦Ìm CMOS process. Simulation results show that the proposed circuit achieves 4.2 ppm/¡æ with temperature from-55 to 125 ¡æ, which is only a third than that of first-order compensated bandgap reference.
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.667.401