Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at lo...

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Veröffentlicht in:Science (American Association for the Advancement of Science) 2016-10, Vol.354 (6310), p.302-304
Hauptverfasser: Lee, Sungsik, Nathan, Arokia
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Electric potential
Gain
Materials science
Semiconductor devices
Semiconductors
Thin film transistors
Thin films
Transistors
Voltage
Wearable computers
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Zusammenfassung:The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (
ISSN:0036-8075
1095-9203
DOI:10.1126/science.aah5035