Sub-nanosecond Yb:KLu(WO sub(4)) sub(2) microchip laser

A diode-pumped Yb:KLu(WO sub(4)) sub(2) microchip laser passively Q-switched by a Cr super(4+):YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 mu J at a pulse repetition frequency of 12.4...

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Veröffentlicht in:Optics letters 2016-06, Vol.41 (11), p.2620-2623
Hauptverfasser: Loiko, P, Serres, J M, Mateos, X, Yumashev, K, Yasukevich, A, Petrov, V, Griebner, U, Aguilo, M, Diaz, F
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Sprache:eng
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Zusammenfassung:A diode-pumped Yb:KLu(WO sub(4)) sub(2) microchip laser passively Q-switched by a Cr super(4+):YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 mu J at a pulse repetition frequency of 12.4 kHz. The output beam had an excellent circular profile with M super(2)
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.41.002620