Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy

Large area synthesis of 1D‐MoSe2 nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D‐MoSe2, and 1D‐2D‐MoSe2 hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio.

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Veröffentlicht in:Advanced materials (Weinheim) 2017-03, Vol.29 (12), p.n/a
Hauptverfasser: Poh, Sock Mui, Tan, Sherman J. R., Zhao, Xiaoxu, Chen, Zhongxin, Abdelwahab, Ibrahim, Fu, Deyi, Xu, Hai, Bao, Yang, Zhou, Wu, Loh, Kian Ping
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container_issue 12
container_start_page
container_title Advanced materials (Weinheim)
container_volume 29
creator Poh, Sock Mui
Tan, Sherman J. R.
Zhao, Xiaoxu
Chen, Zhongxin
Abdelwahab, Ibrahim
Fu, Deyi
Xu, Hai
Bao, Yang
Zhou, Wu
Loh, Kian Ping
description Large area synthesis of 1D‐MoSe2 nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D‐MoSe2, and 1D‐2D‐MoSe2 hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio.
doi_str_mv 10.1002/adma.201605641
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source Wiley Online Library Journals Frontfile Complete
subjects 1D synthesis
1D‐2D heterostructures
Chemical synthesis
Epitaxial growth
Materials science
Molecular beam epitaxy
MoSe2
Substrates
transition metal dichalcogenide
title Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy
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