Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy
Large area synthesis of 1D‐MoSe2 nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D‐MoSe2, and 1D‐2D‐MoSe2 hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio.
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Veröffentlicht in: | Advanced materials (Weinheim) 2017-03, Vol.29 (12), p.n/a |
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container_title | Advanced materials (Weinheim) |
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creator | Poh, Sock Mui Tan, Sherman J. R. Zhao, Xiaoxu Chen, Zhongxin Abdelwahab, Ibrahim Fu, Deyi Xu, Hai Bao, Yang Zhou, Wu Loh, Kian Ping |
description | Large area synthesis of 1D‐MoSe2 nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D‐MoSe2, and 1D‐2D‐MoSe2 hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio. |
doi_str_mv | 10.1002/adma.201605641 |
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subjects | 1D synthesis 1D‐2D heterostructures Chemical synthesis Epitaxial growth Materials science Molecular beam epitaxy MoSe2 Substrates transition metal dichalcogenide |
title | Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy |
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