Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy

Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy

Large area synthesis of 1D‐MoSe2 nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D‐MoSe2, and 1D‐2D‐MoSe2 hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2017-03, Vol.29 (12), p.n/a
Hauptverfasser: Poh, Sock Mui, Tan, Sherman J. R., Zhao, Xiaoxu, Chen, Zhongxin, Abdelwahab, Ibrahim, Fu, Deyi, Xu, Hai, Bao, Yang, Zhou, Wu, Loh, Kian Ping
Format: Artikel
Sprache:eng
Schlagworte:
1D synthesis
1D‐2D heterostructures
Chemical synthesis
Epitaxial growth
Materials science
Molecular beam epitaxy
MoSe2
Substrates
transition metal dichalcogenide
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Large area synthesis of 1D‐MoSe2 nanoribbons on both insulating and conducting substrates via molecular beam epitaxy is presented. Dimensional controlled growth of 2D, 1D‐MoSe2, and 1D‐2D‐MoSe2 hybrid heterostructure is achieved by tuning the growth temperature or Mo:Se precursor ratio.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201605641