Weak localization, hole-hole interactions, and the "Metal"-insulator transition in two dimensions

A detailed investigation of the metallic behavior in high-quality GaAs-AlGaAs two-dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ( r(s)>10) and high quality of these systems, both weak localization (observed via...

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Veröffentlicht in:Physical review letters 2000-03, Vol.84 (11), p.2489-2492
Hauptverfasser: Simmons, MY, Hamilton, AR, Pepper, M, Linfield, EH, Rose, PD, Ritchie, DA
Format: Artikel
Sprache:eng
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Zusammenfassung:A detailed investigation of the metallic behavior in high-quality GaAs-AlGaAs two-dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ( r(s)>10) and high quality of these systems, both weak localization (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. If these quantum corrections persist down to T = 0, the results suggest that even at high r(s) there is no metallic phase in two dimensions.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.84.2489