Signature of electron-plasmon quantum kinetics in GaAs
We predict a carrier-density dependent oscillation, which is superimposed on the decay of the coherent control photon echo signal of a semiconductor. It reflects the oscillatory transfer of excitation back and forth between electrons and a mixed plasmon-phonon mode. This signature provides obvious a...
Gespeichert in:
Veröffentlicht in: | Physical review letters 2000-10, Vol.85 (16), p.3508-3511 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We predict a carrier-density dependent oscillation, which is superimposed on the decay of the coherent control photon echo signal of a semiconductor. It reflects the oscillatory transfer of excitation back and forth between electrons and a mixed plasmon-phonon mode. This signature provides obvious and unique evidence for the finite duration of the interaction process, i.e., evidence for the collective Coulomb quantum kinetics. The theoretical predictions for the model semiconductor GaAs are reproduced in corresponding experiments. |
---|---|
ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/physrevlett.85.3508 |